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Model SI7450DP-T1-GE3
Description VISHAY SI7450DP-T1-GE3 MOSFET Transistor, N Channel, 3.2A, 200V, 65mohm, 10V, 4.5V
Product QR code
Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
9.64  yuan 9.64yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2168) Minimum order quantity(1)
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Technical parameters/drain source resistance:

65 mΩ

 

Technical parameters/dissipated power:

1.9 W

 

Technical parameters/threshold voltage:

4.5 V

 

Technical parameters/drain source voltage (Vds):

200 V

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/working junction temperature (Max):

150 ℃

 

Technical parameters/dissipated power (Max):

1.9W (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SO-8

 

Dimensions/Packaging:

SO-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Cut Tape (CT)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with standard/REACH SVHC version:

2014/06/16

 

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Alternative material

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DPAK N-CH 200V 13A
SI7450DP-T1-E3 SI7450DP-T1-E3 Vishay Siliconix 类似代替 SO-8
MOSFET N-CH 200V 3.2A PPAK SO-8
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MOSFET N-CH 200V 3.2A PPAK SO-8
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