Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 200 V |
|
Technical parameters/Continuous drain current (Ids): | 13A |
|
Technical parameters/rise time: | 27 ns |
|
Technical parameters/Input capacitance (Ciss): | 830pF @25V(Vds) |
|
Technical parameters/descent time: | 10 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 110000 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | DPAK-252 |
|
Dimensions/Packaging: | DPAK-252 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR13N20DPBF
|
Infineon | 功能相似 | TO-252-3 |
INFINEON IRFR13N20DPBF 晶体管, MOSFET, N沟道, 13 A, 200 V, 235 mohm, 10 V, 5.5 V
|
||
IRFR13N20DTRPBF
|
International Rectifier | 功能相似 | TO-252-3 |
晶体管, MOSFET, N沟道, 13 A, 200 V, 0.235 ohm, 10 V, 5.5 V
|
||
IRFR13N20DTRPBF
|
Infineon | 功能相似 | TO-252-3 |
晶体管, MOSFET, N沟道, 13 A, 200 V, 0.235 ohm, 10 V, 5.5 V
|
||
STD17NF25
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD17NF25 晶体管, MOSFET, N沟道, 8.5 A, 250 V, 140 mohm, 10 V, 3 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review