Technical parameters/rated power: 110 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.235 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 110 W
Technical parameters/threshold voltage: 5.5 V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 13A
Technical parameters/rise time: 27 ns
Technical parameters/Input capacitance (Ciss): 830pF @25V(Vds)
Technical parameters/rated power (Max): 110 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 110W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR13N20DPBF
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IRFR13N20DPBF 晶体管, MOSFET, N沟道, 13 A, 200 V, 235 mohm, 10 V, 5.5 V
|
||
IRFR13N20DTRLP
|
International Rectifier | 类似代替 | TO-252-3 |
场效应管(MOSFET) IRFR13N20DTRLP DPAK
|
||
IRFR13N20DTRPBF
|
International Rectifier | 类似代替 | TO-252-3 |
晶体管, MOSFET, N沟道, 13 A, 200 V, 0.235 ohm, 10 V, 5.5 V
|
||
IRFR13N20DTRPBF
|
Infineon | 类似代替 | TO-252-3 |
晶体管, MOSFET, N沟道, 13 A, 200 V, 0.235 ohm, 10 V, 5.5 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review