Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 13.0 A
Technical parameters/drain source resistance: 0.235 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 110 W
Technical parameters/product series: IRFR13N20D
Technical parameters/input capacitance: 830pF @25V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/Continuous drain current (Ids): 13.0 A
Technical parameters/rise time: 27.0 ns
Technical parameters/Input capacitance (Ciss): 830pF @25V(Vds)
Technical parameters/rated power (Max): 110 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR13N20DPBF
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IRFR13N20DPBF 晶体管, MOSFET, N沟道, 13 A, 200 V, 235 mohm, 10 V, 5.5 V
|
||
IRFR13N20DTRLP
|
International Rectifier | 类似代替 | TO-252-3 |
场效应管(MOSFET) IRFR13N20DTRLP DPAK
|
||
IRFR13N20DTRRP
|
International Rectifier | 类似代替 | TO-252-3 |
DPAK N-CH 200V 13A
|
||
STD17NF25
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD17NF25 晶体管, MOSFET, N沟道, 8.5 A, 250 V, 140 mohm, 10 V, 3 V
|
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