Technical parameters/rated voltage (DC): | 200 V |
|
Technical parameters/rated current: | 13.0 A |
|
Technical parameters/dissipated power: | 110 W |
|
Technical parameters/product series: | IRFR13N20D |
|
Technical parameters/drain source voltage (Vds): | 200 V |
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Technical parameters/Continuous drain current (Ids): | 13.0 A |
|
Technical parameters/rise time: | 27.0 ns |
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Technical parameters/Input capacitance (Ciss): | 830pF @25V(Vds) |
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Technical parameters/rated power (Max): | 110 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252 |
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Dimensions/Packaging: | TO-252 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR13N20DPBF
|
Infineon | 功能相似 | TO-252-3 |
INFINEON IRFR13N20DPBF 晶体管, MOSFET, N沟道, 13 A, 200 V, 235 mohm, 10 V, 5.5 V
|
||
IRFR13N20DTRPBF
|
International Rectifier | 功能相似 | TO-252-3 |
晶体管, MOSFET, N沟道, 13 A, 200 V, 0.235 ohm, 10 V, 5.5 V
|
||
IRFR13N20DTRPBF
|
Infineon | 功能相似 | TO-252-3 |
晶体管, MOSFET, N沟道, 13 A, 200 V, 0.235 ohm, 10 V, 5.5 V
|
||
STD17NF25
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD17NF25 晶体管, MOSFET, N沟道, 8.5 A, 250 V, 140 mohm, 10 V, 3 V
|
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