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Model IRS21850STRPBF

Description MOSFET DRVR 600V 1Out Hi Side Non-Inv 8Pin SOIC T/R

Brand: Infineon

Packaging SOIC-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rise/fall time:	15 ns
Technical parameters/number of output interfaces:	1
Technical parameters/output current:	4 A
Technical parameters/dissipated power:	1.25 W
Technical parameters/rise time:	40 ns
Technical parameters/descent time:	40 ns
Technical parameters/descent time (Max):	40 ns
Technical parameters/rise time (Max):	40 ns
Technical parameters/operating temperature (Max):	125 ℃
Technical parameters/operating temperature (Min):	40 ℃
Technical parameters/dissipated power (Max):	1250 mW
Technical parameters/power supply voltage:	10V ~ 20V
Technical parameters/power supply voltage (Max):	20 V
Technical parameters/power supply voltage (Min):	10 V
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SOIC-8
Dimensions/Length:	5 mm
Dimensions/Width:	4 mm
Dimensions/Height:	1.5 mm
Dimensions/Packaging:	SOIC-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Not Recommended for New Designs
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	IRS21850SPBF	International Rectifier	类似代替	SOIC-8	INFINEON IRS21850SPBF 门驱动器, IGBT/MOSFET, 高压侧, 10V-20V电源, 4A输出, 160ns延迟, SOIC-8	PDF
	IRS21850SPBF	Infineon	类似代替	SOIC-8	INFINEON IRS21850SPBF 门驱动器, IGBT/MOSFET, 高压侧, 10V-20V电源, 4A输出, 160ns延迟, SOIC-8	PDF