Technical parameters/power supply voltage (DC): 10.0V (min)
Technical parameters/rated power: 625 mW
Technical parameters/rise/fall time: 15 ns
Technical parameters/number of output interfaces: 1
Technical parameters/output voltage: 600 V
Technical parameters/output current: 4 A
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/dissipated power: 1250 mW
Technical parameters/descent time (Max): 40 ns
Technical parameters/rise time (Max): 40 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1250 mW
Technical parameters/power supply voltage: 10V ~ 20V
Technical parameters/power supply voltage (Max): 20 V
Technical parameters/power supply voltage (Min): 10 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Each
Other/Manufacturing Applications: Industrial, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRS21850STRPBF
|
Infineon | 类似代替 | SOIC-8 |
MOSFET DRVR 600V 1Out Hi Side Non-Inv 8Pin SOIC T/R
|
||
IRS21850STRPBF
|
IFA | 类似代替 |
MOSFET DRVR 600V 1Out Hi Side Non-Inv 8Pin SOIC T/R
|
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