Technical parameters/power supply voltage (DC): | 10.0V (min) |
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Technical parameters/number of output interfaces: | 1 |
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Technical parameters/dissipated power: | 1.25 W |
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Technical parameters/product series: | IRS21850 |
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Technical parameters/rise time: | 40 ns |
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Technical parameters/descent time: | 40 ns |
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Technical parameters/descent time (Max): | 40 ns |
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Technical parameters/rise time (Max): | 40 ns |
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Technical parameters/operating temperature (Max): | 125 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 1250 mW |
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Technical parameters/power supply voltage: | 10V ~ 20V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRS21850STRPBF
|
Infineon | 类似代替 | SOIC-8 |
MOSFET DRVR 600V 1Out Hi Side Non-Inv 8Pin SOIC T/R
|
||
IRS21850STRPBF
|
IFA | 类似代替 |
MOSFET DRVR 600V 1Out Hi Side Non-Inv 8Pin SOIC T/R
|
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