Technical parameters/rated voltage (DC): | 100 V |
|
Technical parameters/rated current: | 17.0 A |
|
Technical parameters/drain source resistance: | 0.155 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 79 W |
|
Technical parameters/product series: | IRLR3410 |
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Technical parameters/Input capacitance: | 800pF @25V |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Leakage source breakdown voltage: | 100 V |
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Technical parameters/Continuous drain current (Ids): | 15.0 A, 17.0 A |
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Technical parameters/rise time: | 53.0 ns |
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Technical parameters/Input capacitance (Ciss): | 800pF @25V(Vds) |
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Technical parameters/rated power (Max): | 79 W |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.73 mm |
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Dimensions/Height: | 2.39 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLR3410PBF
|
Infineon | 完全替代 | TO-252-3 |
INFINEON IRLR3410PBF 晶体管, MOSFET, N沟道, 17 A, 100 V, 105 mohm, 10 V, 2 V
|
||
IRLR3410TRPBF
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IRLR3410TRPBF 晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V
|
||
IRLR3410TRRPBF
|
Infineon | 完全替代 | TO-252-3 |
场效应管(MOSFET) IRLR3410TRRPBF DPAK
|
||
IRLR3410TRRPBF
|
International Rectifier | 完全替代 | TO-252-3 |
场效应管(MOSFET) IRLR3410TRRPBF DPAK
|
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