Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 17.0 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 0.155 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 79 W
Technical parameters/product series: IRLR3410
Technical parameters/input capacitance: 800pF @25V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 17.0 A
Technical parameters/rise time: 53.0 ns
Technical parameters/Input capacitance (Ciss): 800pF @25V(Vds)
Technical parameters/rated power (Max): 79 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLR3410PBF
|
Infineon | 完全替代 | TO-252-3 |
INFINEON IRLR3410PBF 晶体管, MOSFET, N沟道, 17 A, 100 V, 105 mohm, 10 V, 2 V
|
||
IRLR3410TRLPBF
|
International Rectifier | 完全替代 | TO-252-3 |
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V
|
||
IRLR3410TRLPBF
|
Infineon | 完全替代 | TO-252-3 |
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V
|
||
IRLR3410TRPBF
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IRLR3410TRPBF 晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V
|
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