Technical parameters/rated power: | 52 W |
|
Technical parameters/number of channels: | 1 |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 79 W |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Continuous drain current (Ids): | 17A |
|
Technical parameters/rise time: | 53 ns |
|
Technical parameters/Input capacitance (Ciss): | 800pF @25V(Vds) |
|
Technical parameters/descent time: | 26 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 79W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-252-3 |
|
Dimensions/Width: | 6.22 mm |
|
Dimensions/Packaging: | TO-252-3 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Not Recommended for New Designs |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLR3410PBF
|
Infineon | 完全替代 | TO-252-3 |
INFINEON IRLR3410PBF 晶体管, MOSFET, N沟道, 17 A, 100 V, 105 mohm, 10 V, 2 V
|
||
IRLR3410TRLPBF
|
International Rectifier | 完全替代 | TO-252-3 |
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V
|
||
IRLR3410TRLPBF
|
Infineon | 完全替代 | TO-252-3 |
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V
|
||
IRLR3410TRPBF
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IRLR3410TRPBF 晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review