Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 300 W |
|
Technical parameters/drain source voltage (Vds): | 55 V |
|
Technical parameters/Input capacitance (Ciss): | 7960pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 330 W |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Packaging: | TO-263-3 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB150NF55T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB150NF55T4 晶体管, MOSFET, N沟道, 60 A, 55 V, 5 mohm, 10 V, 4 V
|
||
STB160N75F3
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
||
STB200NF04T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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