Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 120 A
Technical parameters/drain source resistance: 3.70 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 310000 mW
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: 40.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 120 A
Technical parameters/rise time: 320 ns
Technical parameters/Input capacitance (Ciss): 5100pF @25V(Vds)
Technical parameters/rated power (Max): 310 W
Technical parameters/descent time: 120 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 310000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.4 mm
External dimensions/width: 9.35 mm
External dimensions/height: 4.6 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB100NF04T4
|
ST Microelectronics | 类似代替 | TO-263-3 |
STMICROELECTRONICS STB100NF04T4 晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0043 ohm, 10 V, 2 V
|
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