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Model IRFB3306GPBF

Description HEXFET® N 通道功率 MOSFET 超过 55A，Infineon ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。

Brand: Infineon

Packaging TO-220-3

Delivery time

Packaging method Rail, Tube

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(4027) Minimum order quantity(1)

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Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	230 W
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/Continuous drain current (Ids):	160A
Technical parameters/rise time:	76 ns
Technical parameters/Input capacitance (Ciss):	4520pF @50V(Vds)
Technical parameters/rated power (Max):	230 W
Technical parameters/descent time:	77 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	230W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Length:	10.67 mm
Dimensions/Width:	4.83 mm
Dimensions/Height:	16.51 mm
Dimensions/Packaging:	TO-220-3
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Not Recommended for New Designs
Other/Packaging Methods:	Rail, Tube
Other/Manufacturing Applications:	Battery Operated Drive
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	lead-free

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