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Model STP20NM60FD
Description STMICROELECTRONICS STP20NM60FD 功率场效应管, MOSFET, N沟道, 20 A, 600 V, 290 mohm, 10 V, 4 V
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Brand: ST Microelectronics
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
22.73  yuan 22.73yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9403) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

600 V

 

Technical parameters/rated current:

20.0 A

 

Technical parameters/rated power:

45 W

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

290 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

192 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/Input capacitance:

1.30 nF

 

Technical parameters/gate charge:

37.0 nC

 

Technical parameters/drain source voltage (Vds):

600 V

 

Technical parameters/Leakage source breakdown voltage:

600 V

 

Technical parameters/breakdown voltage of gate source:

±30.0 V

 

Technical parameters/Continuous drain current (Ids):

20.0 A

 

Technical parameters/rise time:

12 ns

 

Technical parameters/Input capacitance (Ciss):

1300pF @25V(Vds)

 

Technical parameters/rated power (Max):

192 W

 

Technical parameters/descent time:

22 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

192W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Length:

10.4 mm

 

Dimensions/Width:

4.6 mm

 

Dimensions/Height:

9.15 mm

 

Dimensions/Packaging:

TO-220-3

 

Physical paramete

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FCP20N60 FCP20N60 Fairchild 功能相似 TO-220-3
SuperFET® 和 SuperFET® II N 通道 MOSFET，Fairchild Semiconductor Fairchild 使用超级结技术增加了 SuperFET® II 高电压功率 MOSFET 系列。 它提供最佳坚固主体二极管性能，适用于要求高功率密度、系统效率和可靠性的交流-直流开关模式电源 (SMPS) 应用，如服务器、电信、计算、工业电源、UPS/ESS、太阳能逆变器和照明应用。 利用先进的电荷平衡技术，设计人员可实现更高效经济的高性能解决方案，可占用更少板空间并提高可靠性。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
STP20NM60A STP20NM60A ST Microelectronics 类似代替 TO-220-3
N沟道650V @ TJMAX - 0.25欧姆 - 20A I2PAK / TO- 220 / TO- 220FP N-CHANNEL 650V@Tjmax - 0.25 Ohm - 20A I2PAK/TO-220/TO-220FP
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