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Model STP20NM60A
Description NChannel 650V @ TJMAX -0.25 ohms -20A I2PAK/TO -220/TO -220FP N-CHANNEL 650V@Tjmax - 0.25 Ohm - 20A I2PAK/TO-220/TO-220FP
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Brand: ST Microelectronics
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7514) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 600 V

Technical parameters/rated current: 20.0 A

Technical parameters/drain source resistance: 290 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 192W (Tc)

Technical parameters/drain source voltage (Vds): 650 V

Technical parameters/leakage source breakdown voltage: 650 V

Technical parameters/breakdown voltage of gate source: ±30.0 V

Technical parameters/Continuous drain current (Ids): 20.0 A

Technical parameters/rise time: 16.0 ns

Technical parameters/Input capacitance (Ciss): 1630pF @25V(Vds)

Technical parameters/rated power (Max): 192 W

Technical parameters/dissipated power (Max): 192W (Tc)

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STP20NM60FD STP20NM60FD ST Microelectronics 类似代替 TO-220-3
STMICROELECTRONICS STP20NM60FD 功率场效应管, MOSFET, N沟道, 20 A, 600 V, 290 mohm, 10 V, 4 V

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