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Specification parameters
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Technical parameters/rated voltage (DC):

600 V

Technical parameters/rated current:

20.0 A

Technical parameters/drain source resistance:

0.15 Ω

Technical parameters/polarity:

N-Channel

Technical parameters/dissipated power:

208 W

Technical parameters/threshold voltage:

5 V

Technical parameters/Input capacitance:

3.08 nF

Technical parameters/gate charge:

98.0 nC

Technical parameters/drain source voltage (Vds):

600 V

Technical parameters/Leakage source breakdown voltage:

600 V

Technical parameters/breakdown voltage of gate source:

±30.0 V

Technical parameters/Continuous drain current (Ids):

20.0 A

Technical parameters/rise time:

140 ns

Technical parameters/Input capacitance (Ciss):

3080pF @25V(Vds)

Technical parameters/rated power (Max):

208 W

Technical parameters/descent time:

65 ns

Technical parameters/operating temperature (Max):

150 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

208W (Tc)

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

TO-263-3

Dimensions/Length:

10.67 mm

Dimensions/Width:

9.65 mm

Dimensions/Height:

4.83 mm

Dimensions/Packaging:

TO-263-3

Physical parameters/operating temperature:

-55℃ ~ 150℃

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tape & Reel (TR)

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
FCB20N60TM	Rochester	功能相似	TO-263	ON Semiconductor SuperFET 系列 Si N沟道 MOSFET FCB20N60TM, 20 A, Vds=600 V, 3引脚 D2PAK (TO-263)封装
FCB20N60TM	Fairchild	功能相似	TO-263-3	ON Semiconductor SuperFET 系列 Si N沟道 MOSFET FCB20N60TM, 20 A, Vds=600 V, 3引脚 D2PAK (TO-263)封装	PDF
FCB20N60TM	ON Semiconductor	功能相似	TO-263-3	ON Semiconductor SuperFET 系列 Si N沟道 MOSFET FCB20N60TM, 20 A, Vds=600 V, 3引脚 D2PAK (TO-263)封装	PDF
STB20NM60T4	ST Microelectronics	功能相似	TO-263-3	N沟道600V - 仅为0.25mΩ - 20A TO- 220 / FP / D2PAK / I2PAK的MDmesh功率MOSFET ？ N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET	PDF

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643