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Model FCB20N60TM
Description SuperFET® 和 SuperFET® II N 通道 MOSFET，Fairchild Semiconductor Fairchild 使用超级结技术增加了 SuperFET® II 高电压功率 MOSFET 系列。 它提供最佳坚固主体二极管性能，适用于要求高功率密度、系统效率和可靠性的交流-直流开关模式电源 (SMPS) 应用，如服务器、电信、计算、工业电源、UPS/ESS、太阳能逆变器和照明应用。 利用先进的电荷平衡技术，设计人员可实现更高效经济的高性能解决方案，可占用更少板空间并提高可靠性。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
Product QR code
Brand: Fairchild
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
23.56  yuan 23.56yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8974) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

600 V

 

Technical parameters/rated current:

20.0 A

 

Technical parameters/number of channels:

1

 

Technical parameters/drain source resistance:

0.15 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

208 W

 

Technical parameters/threshold voltage:

5 V

 

Technical parameters/Input capacitance:

3.08 nF

 

Technical parameters/drain source voltage (Vds):

600 V

 

Technical parameters/Leakage source breakdown voltage:

600 V

 

Technical parameters/Continuous drain current (Ids):

20.0 A

 

Technical parameters/rise time:

140 ns

 

Technical parameters/Input capacitance (Ciss):

3080pF @25V(Vds)

 

Technical parameters/rated power (Max):

208 W

 

Technical parameters/descent time:

65 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

208W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-263-3

 

Dimensions/Length:

10.67 mm

 

Dimensions/Width:

9.65 mm

 

Dimensions/Height:

4.83 mm

 

Dimensions/Packaging:

TO-263-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Co

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FCB20N60 FCB20N60 Fairchild 完全替代 TO-263
FAIRCHILD SEMICONDUCTOR FCB20N60 功率场效应管, MOSFET, N沟道, 20 A, 600 V, 150 mohm, 10 V, 5 V
PDF
FCB20N60FTM FCB20N60FTM Fairchild 功能相似 TO-263-3
SuperFET® 和 SuperFET® II N 通道 MOSFET，Fairchild Semiconductor Fairchild 使用超级结技术增加了 SuperFET® II 高电压功率 MOSFET 系列。 它提供最佳坚固主体二极管性能，适用于要求高功率密度、系统效率和可靠性的交流-直流开关模式电源 (SMPS) 应用，如服务器、电信、计算、工业电源、UPS/ESS、太阳能逆变器和照明应用。 利用先进的电荷平衡技术，设计人员可实现更高效经济的高性能解决方案，可占用更少板空间并提高可靠性。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
STB25NM60N STB25NM60N ST Microelectronics 功能相似 TO-263-3
N沟道600 V ， 0.130 Ω ， 21 A，的MDmesh II ™功率MOSFET TO- 220 ， TO- 220FP ， I2PAK ， D2PAK ， TO- 247 N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
PDF

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