Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 20.0 A
Technical parameters/drain source resistance: 140 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 160W (Tc)
Technical parameters/input capacitance: 2.54 nF
Technical parameters/gate charge: 84.0 nC
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/breakdown voltage of gate source: ±25.0 V
Technical parameters/Continuous drain current (Ids): 21.0 A
Technical parameters/rise time: 18 ns
Technical parameters/Input capacitance (Ciss): 2400pF @50V(Vds)
Technical parameters/rated power (Max): 160 W
Technical parameters/descent time: 24 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 160W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB25NM60ND
|
ST Microelectronics | 类似代替 | TO-263-3 |
N 通道 FDmesh™ 功率 MOSFET,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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