Chip AI consultant
Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.13 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 160 W |
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Technical parameters/threshold voltage: | 4 V |
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Technical parameters/drain source voltage (Vds): | 600 V |
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Technical parameters/Continuous drain current (Ids): | 21A |
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Technical parameters/rise time: | 30 ns |
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Technical parameters/Input capacitance (Ciss): | 2400pF @50V(Vds) |
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Technical parameters/rated power (Max): | 160 W |
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Technical parameters/descent time: | 40 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 160W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Length: | 10.75 mm |
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Dimensions/Width: | 10.4 mm |
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Dimensions/Height: | 4.6 mm |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB23NM60N
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ST Microelectronics | 类似代替 | TO-263-3 |
N沟道600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO- 220 / FP TO- 247 ，第二代的MDmesh ™功率MOSFET N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh? Power MOSFET
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