Technical parameters/dissipated power: | 150W (Tc) |
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Technical parameters/drain source voltage (Vds): | 600 V |
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Technical parameters/Input capacitance (Ciss): | 2050pF @50V(Vds) |
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Technical parameters/dissipated power (Max): | 150W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB25NM60N
|
ST Microelectronics | 类似代替 | TO-263-3 |
N沟道600 V , 0.130 Ω , 21 A,的MDmesh II ™功率MOSFET TO- 220 , TO- 220FP , I2PAK , D2PAK , TO- 247 N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
|
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