Technical parameters/polarity: | P-CH |
|
Technical parameters/dissipated power: | 0.5 W |
|
Technical parameters/drain source voltage (Vds): | 12 V |
|
Technical parameters/Continuous drain current (Ids): | 1.8A |
|
Technical parameters/rise time: | 4 ns |
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Technical parameters/Input capacitance (Ciss): | 180pF @6V(Vds) |
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Technical parameters/descent time: | 8 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 500 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | PICOSTAR-3 |
|
Dimensions/Packaging: | PICOSTAR-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Supply in progress |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD23381F4
|
TI | 类似代替 | PICOSTAR-3 |
P 通道 FemtoFET™ 功率 MOSFET,Texas Instruments ### MOSFET 晶体管,Texas Instruments
|
||
CSD25480F3
|
TI | 类似代替 | PICOSTAR-3 |
SLPS579 可用文献编号
|
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