Technical parameters/number of channels: 1
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 500 mW
Technical parameters/threshold voltage: 950 mV
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/Continuous drain current (Ids): 2.3A
Technical parameters/rise time: 3.9 ns
Technical parameters/Input capacitance (Ciss): 236pF @6V(Vds)
Technical parameters/descent time: 7 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: PICOSTAR-3
External dimensions/length: 1 mm
External dimensions/width: 0.64 mm
External dimensions/height: 0.35 mm
External dimensions/packaging: PICOSTAR-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Supply in progress
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD23280F3
|
TI | 类似代替 | PICOSTAR-3 |
CSD23280F3 12V P 沟道 FemtoFET™ MOSFET
|
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