Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 0.5 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 1.7A
Technical parameters/rise time: 5 ns
Technical parameters/Input capacitance (Ciss): 119pF @10V(Vds)
Technical parameters/descent time: 7 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: PICOSTAR-3
External dimensions/packaging: PICOSTAR-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Supply in progress
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD23381F4
|
TI | 类似代替 | PICOSTAR-3 |
P 通道 FemtoFET™ 功率 MOSFET,Texas Instruments ### MOSFET 晶体管,Texas Instruments
|
||
CSD25481F4
|
TI | 类似代替 | PICOSTAR-3 |
P 通道 NexFET 功率 MOSFET,CSD25481W4
|
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