Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 1.30 W |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOT |
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Dimensions/Packaging: | SOT |
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Other/Product Lifecycle: | Obsolete |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Fairchild | 功能相似 | SOT |
单P沟道增强型MOSFET Single P-Channel Enhancement Mode MOSFET
|
||
SI9435BDY-T1-E3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
Trans MOSFET P-CH 30V 4.1A 8Pin SOIC N T/R
|
||
SI9435BDY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
Trans MOSFET P-CH 30V 4.1A 8Pin SOIC N T/R
|
||
|
|
Vishay Intertechnology | 功能相似 | SOIC-8 |
Trans MOSFET P-CH 30V 4.1A 8Pin SOIC N T/R
|
||
SI9435BDY-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
P-Channel 30V 0.042Ω 1.3W Surface Mount Power Mosfet - SOIC-8
|
||
SI9435BDY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
P-Channel 30V 0.042Ω 1.3W Surface Mount Power Mosfet - SOIC-8
|
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