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Model SI9435BDY-T1-E3
Description -30V,-4.1A,PChannel MOSFET
Product QR code
Brand: VISHAY
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.41  yuan 2.41yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9874) Minimum order quantity(1)
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Technical parameters/drain source resistance:

42 mΩ

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

2.5 W

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

-5.70 A

 

Technical parameters/rated power (Max):

1.3 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Minimum Packaging:

2500

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF9333PBF IRF9333PBF Infineon 功能相似 SOIC-8
INFINEON IRF9333PBF 晶体管, MOSFET, P沟道, -9.2 A, -30 V, 15.6 mohm, -10 V, -1.8 V
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IRF9333PBF IRF9333PBF International Rectifier 功能相似 SOIC-8
INFINEON IRF9333PBF 晶体管, MOSFET, P沟道, -9.2 A, -30 V, 15.6 mohm, -10 V, -1.8 V
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SI9435BDY-T1-GE3 SI9435BDY-T1-GE3 Vishay Siliconix 类似代替 SO-8
VISHAY SI9435BDY-T1-GE3 场效应管, MOSFET, P沟道, -4.1A, -30V, 1.3W
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SI9435BDY-T1-GE3 SI9435BDY-T1-GE3 Vishay Semiconductor 类似代替 SOIC-8
VISHAY SI9435BDY-T1-GE3 场效应管, MOSFET, P沟道, -4.1A, -30V, 1.3W
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