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Model SI9435BDY-T1-E3
Description VISHAY SI9435BDY-T1-E3 场效应管, MOSFET, P沟道, 8-SOIC
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.06  yuan 1.06yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3410) Minimum order quantity(1)
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Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.07 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

2.5 W

 

Technical parameters/drain source voltage (Vds):

-30.0 V

 

Technical parameters/Continuous drain current (Ids):

-5.70 A

 

Technical parameters/rise time:

14 ns

 

Technical parameters/descent time:

30 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Length:

5 mm

 

Dimensions/Height:

1.55 mm

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF9333PBF IRF9333PBF Infineon 功能相似 SOIC-8
INFINEON IRF9333PBF 晶体管, MOSFET, P沟道, -9.2 A, -30 V, 15.6 mohm, -10 V, -1.8 V
PDF
IRF9333PBF IRF9333PBF International Rectifier 功能相似 SOIC-8
INFINEON IRF9333PBF 晶体管, MOSFET, P沟道, -9.2 A, -30 V, 15.6 mohm, -10 V, -1.8 V
PDF
SI9435BDY-T1-GE3 SI9435BDY-T1-GE3 Vishay Siliconix 类似代替 SO-8
VISHAY SI9435BDY-T1-GE3 场效应管, MOSFET, P沟道, -4.1A, -30V, 1.3W
PDF
SI9435BDY-T1-GE3 SI9435BDY-T1-GE3 Vishay Semiconductor 类似代替 SOIC-8
VISHAY SI9435BDY-T1-GE3 场效应管, MOSFET, P沟道, -4.1A, -30V, 1.3W
PDF

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