Technical parameters/dissipated power: | 35W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 200 V |
|
Technical parameters/Input capacitance (Ciss): | 800pF @25V(Vds) |
|
Technical parameters/dissipated power (Max): | 35W (Tc) |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Packaging: | TO-220-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFI630GPBF
|
LiteOn | 类似代替 | TO-220-3 |
MOSFET N-CH 200V 5.9A TO220FP
|
||
IRFI630GPBF
|
Vishay Intertechnology | 类似代替 | TO-220 |
MOSFET N-CH 200V 5.9A TO220FP
|
||
IRFI630GPBF
|
Vishay Siliconix | 类似代替 | TO-220-3 |
MOSFET N-CH 200V 5.9A TO220FP
|
||
IRFI630GPBF
|
International Rectifier | 类似代替 |
MOSFET N-CH 200V 5.9A TO220FP
|
|||
IRFI630GPBF
|
VISHAY | 类似代替 | TO-220-3 |
MOSFET N-CH 200V 5.9A TO220FP
|
||
IRFI630GPBF
|
Vishay Semiconductor | 类似代替 | TO-220-3 |
MOSFET N-CH 200V 5.9A TO220FP
|
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