Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 5.90 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 32.0 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/Continuous drain current (Ids): 5.90 A
Technical parameters/rise time: 28.0 ns
Technical parameters/isolation voltage: 2.50 kV
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFI630G
|
International Rectifier | 类似代替 | Through Hole |
MOSFET N-CH 200V 5.9A TO220FP
|
||
IRFI630G
|
Vishay Siliconix | 类似代替 | TO-220-3 |
MOSFET N-CH 200V 5.9A TO220FP
|
||
IRFI630G
|
Vishay Semiconductor | 类似代替 | TO-220-3 |
MOSFET N-CH 200V 5.9A TO220FP
|
||
IRFI640GPBF
|
VISHAY | 功能相似 | TO-220-3 |
VISHAY IRFI640GPBF. 场效应管, MOSFET, N沟道
|
||
|
|
LiteOn | 功能相似 | TO-220 |
VISHAY IRFI640GPBF. 场效应管, MOSFET, N沟道
|
||
IRFI640GPBF
|
Vishay Semiconductor | 功能相似 | TO-220 |
VISHAY IRFI640GPBF. 场效应管, MOSFET, N沟道
|
||
IRFI640GPBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
VISHAY IRFI640GPBF. 场效应管, MOSFET, N沟道
|
||
IRFI640GPBF
|
Vishay Intertechnology | 功能相似 | TO-220 |
VISHAY IRFI640GPBF. 场效应管, MOSFET, N沟道
|
||
IRFI640GPBF
|
International Rectifier | 功能相似 | TO-220-3 |
VISHAY IRFI640GPBF. 场效应管, MOSFET, N沟道
|
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