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Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/궟동: Single
Other/Case/Package: TO-220-3 FP
Other/Packaging: Tube
Other/Brand: Vishay / Siliconix
Other/동착 동: Through Hole
Other/Soft 랜イ동터극동: N-Channel
Other/Channel Mode: Enhancement
Other/하강 Economy: 20 ns
Other/Id - Link Files: 5.9 A
Other/Delete 동업체: Vishay
Other/동대작동온도: 150 C
Other/π소작동온도: 55 C
Other/Pd - 력발산: 35 W
Other/Delete 품카테 High speed: Single-Gate MOSFET Transistors
Other/RDs On - Drain Source 저항: 400 mOhms
Other/상승クク: 28 ns
Other/Standard Pack Qty: 50
Other/표준오프い Contact Us: 39 ns
Other/Vds - 레イ?동항복압: 200 V
Other/Vgs - 게イプ - ?동항복압: +/- 20 V
Other/RoHS: Non-Compliant
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFI630G
|
International Rectifier | 类似代替 | Through Hole |
MOSFET N-CH 200V 5.9A TO220FP
|
||
IRFI630G
|
Vishay Siliconix | 类似代替 | TO-220-3 |
MOSFET N-CH 200V 5.9A TO220FP
|
||
IRFI630G
|
Vishay Semiconductor | 类似代替 | TO-220-3 |
MOSFET N-CH 200V 5.9A TO220FP
|
||
IRFI640GPBF
|
VISHAY | 功能相似 | TO-220-3 |
VISHAY IRFI640GPBF. 场效应管, MOSFET, N沟道
|
||
|
|
LiteOn | 功能相似 | TO-220 |
VISHAY IRFI640GPBF. 场效应管, MOSFET, N沟道
|
||
IRFI640GPBF
|
Vishay Semiconductor | 功能相似 | TO-220 |
VISHAY IRFI640GPBF. 场效应管, MOSFET, N沟道
|
||
IRFI640GPBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
VISHAY IRFI640GPBF. 场效应管, MOSFET, N沟道
|
||
IRFI640GPBF
|
Vishay Intertechnology | 功能相似 | TO-220 |
VISHAY IRFI640GPBF. 场效应管, MOSFET, N沟道
|
||
IRFI640GPBF
|
International Rectifier | 功能相似 | TO-220-3 |
VISHAY IRFI640GPBF. 场效应管, MOSFET, N沟道
|
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