Technical parameters/drain source resistance: | 0.5 Ω |
|
Technical parameters/dissipated power: | 3.1 W |
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Technical parameters/Input capacitance: | 270pF @25V |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-223 |
|
Dimensions/Length: | 6.7 mm |
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Dimensions/Height: | 1.8 mm |
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Dimensions/Packaging: | SOT-223 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL9014
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET P-CH 60V 1.8A SOT223
|
||
IRFL9014
|
Vishay Siliconix | 完全替代 | TO-261-4 |
MOSFET P-CH 60V 1.8A SOT223
|
||
IRFL9014
|
Vishay Intertechnology | 完全替代 | SOT-223 |
MOSFET P-CH 60V 1.8A SOT223
|
||
IRFL9014TR
|
Vishay Semiconductor | 完全替代 |
MOSFET P-CH 60V 1.8A SOT223
|
|||
IRFL9014TR
|
Vishay Siliconix | 完全替代 | TO-261-4 |
MOSFET P-CH 60V 1.8A SOT223
|
||
IRFL9014TR
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET P-CH 60V 1.8A SOT223
|
||
IRFL9014TRPBF
|
Vishay Intertechnology | 类似代替 | SOT-223 |
TRANSISTOR 1.8A, 60V, 0.5Ω, P-CHANNEL, Si, POWER, MOSFET, TO-261AA, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power
|
||
IRFL9014TRPBF
|
Vishay Dale | 类似代替 |
TRANSISTOR 1.8A, 60V, 0.5Ω, P-CHANNEL, Si, POWER, MOSFET, TO-261AA, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power
|
|||
IRFL9014TRPBF
|
Vishay Siliconix | 类似代替 | TO-261-4 |
TRANSISTOR 1.8A, 60V, 0.5Ω, P-CHANNEL, Si, POWER, MOSFET, TO-261AA, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power
|
||
IRFL9014TRPBF
|
Vishay Semiconductor | 类似代替 | SOT-223 |
TRANSISTOR 1.8A, 60V, 0.5Ω, P-CHANNEL, Si, POWER, MOSFET, TO-261AA, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power
|
||
IRFL9014TRPBF
|
International Rectifier | 类似代替 | SOT-223 |
TRANSISTOR 1.8A, 60V, 0.5Ω, P-CHANNEL, Si, POWER, MOSFET, TO-261AA, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power
|
||
NTF2955T1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR NTF2955T1G 晶体管, MOSFET, P沟道, 2.6 A, -60 V, 170 mohm, 20 V, -4 V
|
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