Technical parameters/drain source resistance: 0.5 Ω
Technical parameters/dissipated power: 3.1 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 270pF @25V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2W (Ta), 3.1W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL9014
|
International Rectifier | 类似代替 | SOT-223 |
MOSFET P-CH 60V 1.8A SOT223
|
||
IRFL9014
|
Vishay Siliconix | 类似代替 | TO-261-4 |
MOSFET P-CH 60V 1.8A SOT223
|
||
IRFL9014
|
Vishay Intertechnology | 类似代替 | SOT-223 |
MOSFET P-CH 60V 1.8A SOT223
|
||
IRFL9014PBF
|
Vishay Siliconix | 类似代替 | TO-261-4 |
Trans MOSFET P-CH 60V 1.8A 4Pin(3+Tab) SOT-223
|
||
IRFL9014PBF
|
Vishay Precision Group | 类似代替 | SOT-223 |
Trans MOSFET P-CH 60V 1.8A 4Pin(3+Tab) SOT-223
|
||
|
|
Vishay Intertechnology | 类似代替 | TO-261 |
Trans MOSFET P-CH 60V 1.8A 4Pin(3+Tab) SOT-223
|
||
IRFL9014PBF
|
VISHAY | 类似代替 | TO-261-4 |
Trans MOSFET P-CH 60V 1.8A 4Pin(3+Tab) SOT-223
|
||
IRFL9014PBF
|
International Rectifier | 类似代替 | SOT-223 |
Trans MOSFET P-CH 60V 1.8A 4Pin(3+Tab) SOT-223
|
||
IRFL9014TR
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 60V 1.8A SOT223
|
|||
IRFL9014TR
|
Vishay Siliconix | 类似代替 | TO-261-4 |
MOSFET P-CH 60V 1.8A SOT223
|
||
IRFL9014TR
|
International Rectifier | 类似代替 | SOT-223 |
MOSFET P-CH 60V 1.8A SOT223
|
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