Technical parameters/drain source resistance: | 0.5 Ω |
|
Technical parameters/dissipated power: | 3.1 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | SOT-223 |
|
Dimensions/Packaging: | SOT-223 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL9014
|
International Rectifier | 类似代替 | SOT-223 |
MOSFET P-CH 60V 1.8A SOT223
|
||
IRFL9014
|
Vishay Siliconix | 类似代替 | TO-261-4 |
MOSFET P-CH 60V 1.8A SOT223
|
||
IRFL9014
|
Vishay Intertechnology | 类似代替 | SOT-223 |
MOSFET P-CH 60V 1.8A SOT223
|
||
IRFL9014PBF
|
Vishay Siliconix | 类似代替 | TO-261-4 |
Trans MOSFET P-CH 60V 1.8A 4Pin(3+Tab) SOT-223
|
||
IRFL9014PBF
|
Vishay Precision Group | 类似代替 | SOT-223 |
Trans MOSFET P-CH 60V 1.8A 4Pin(3+Tab) SOT-223
|
||
|
|
Vishay Intertechnology | 类似代替 | TO-261 |
Trans MOSFET P-CH 60V 1.8A 4Pin(3+Tab) SOT-223
|
||
IRFL9014PBF
|
VISHAY | 类似代替 | TO-261-4 |
Trans MOSFET P-CH 60V 1.8A 4Pin(3+Tab) SOT-223
|
||
IRFL9014PBF
|
International Rectifier | 类似代替 | SOT-223 |
Trans MOSFET P-CH 60V 1.8A 4Pin(3+Tab) SOT-223
|
||
IRFL9014TR
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 60V 1.8A SOT223
|
|||
IRFL9014TR
|
Vishay Siliconix | 类似代替 | TO-261-4 |
MOSFET P-CH 60V 1.8A SOT223
|
||
IRFL9014TR
|
International Rectifier | 类似代替 | SOT-223 |
MOSFET P-CH 60V 1.8A SOT223
|
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