Technical parameters/drain source voltage (Vds): | 600 V |
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Technical parameters/rise time: | 60.5 ns |
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Technical parameters/Input capacitance (Ciss): | 965pF @25V(Vds) |
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Technical parameters/rated power (Max): | 48 W |
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Technical parameters/descent time: | 64.5 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 48000 mW |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Intersil | 功能相似 |
20A , 100V , 0.054 Ohm的N通道,逻辑电平UltraFET功率MOSFET 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
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|||
HUF76629D3S
|
Fairchild | 功能相似 | TO-252-3 |
20A , 100V , 0.054 Ohm的N通道,逻辑电平UltraFET功率MOSFET 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
||
HUF76629D3S
|
ON Semiconductor | 功能相似 | TO-252-3 |
20A , 100V , 0.054 Ohm的N通道,逻辑电平UltraFET功率MOSFET 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
||
MTD6N10E
|
Motorola | 功能相似 |
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.4Ω
|
|||
SSS6N70A
|
Samsung | 功能相似 | TO-220 |
Advanced Power MOSFET TO-220F
|
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