Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Unknown
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQPF8N60C
|
ON Semiconductor | 功能相似 | TO-220-3 |
FQPF8N60C 管装
|
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|
ON Semiconductor | 功能相似 |
Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
|
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FQU2N60C
|
Fairchild | 功能相似 | TO-251-3 |
Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
|
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