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Model BDX33C

Description 达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors

Brand: ON Semiconductor

Packaging TO-220-3

Delivery time

Packaging method Bag

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(4471) Minimum order quantity(1)

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Technical parameters/rated voltage (DC):	100 V
Technical parameters/rated current:	10.0 A
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	70000 mW
Technical parameters/breakdown voltage (collector emitter):	100 V
Technical parameters/Maximum allowable collector current:	10A
Technical parameters/minimum current amplification factor (hFE):	750 @3A, 3V
Technical parameters/rated power (Max):	70 W
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	70000 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Packaging:	TO-220-3
Physical parameters/operating temperature:	-65℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Bag
Other/Minimum Packaging:	50
Compliant with standards/RoHS standards:	Non-Compliant
Compliant with standards/lead standards:	Contains Lead
Customs information/ECCN code:	EAR99

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