Technical parameters/drain source resistance: | 77 mΩ |
|
Technical parameters/dissipated power: | 3.7W (Ta), 150W (Tc) |
|
Technical parameters/threshold voltage: | 2 V |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Input capacitance (Ciss): | 2200pF @25V(Vds) |
|
Technical parameters/dissipated power (Max): | 3.7W (Ta), 150W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Packaging: | TO-263-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRL540S
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 100V 28A D2PAK
|
||
IRL540STRL
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 100V 28A D2PAK
|
|||
IRL540STRL
|
VISHAY | 完全替代 | D2PAK |
MOSFET N-CH 100V 28A D2PAK
|
||
IRL540STRLPBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 100V 28A D2PAK
|
||
IRL540STRLPBF
|
VISHAY | 完全替代 | TO-263-3 |
MOSFET N-CH 100V 28A D2PAK
|
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