Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.7 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 28.0 A
Technical parameters/rise time: 170 ns
Technical parameters/Input capacitance (Ciss): 2200pF @25V(Vds)
Technical parameters/rated power (Max): 3.7 W
Technical parameters/descent time: 80 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3700 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRL540NSPBF
|
International Rectifier | 功能相似 | TO-263-3 |
INTERNATIONAL RECTIFIER IRL540NSPBF 场效应管, N 通道, MOSFET, 100V, 36A, D2-PAK 新
|
||
IRL540NSPBF
|
Infineon | 功能相似 | TO-263-3 |
INTERNATIONAL RECTIFIER IRL540NSPBF 场效应管, N 通道, MOSFET, 100V, 36A, D2-PAK 新
|
||
|
|
IFC | 功能相似 |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.044Ω; ID 36A; D2Pak; PD 140W; VGS +/-16V
|
|||
IRL540NSTRRPBF
|
Infineon | 功能相似 | TO-263-3 |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.044Ω; ID 36A; D2Pak; PD 140W; VGS +/-16V
|
||
IRL540S
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 100V 28A D2PAK
|
||
IRL540SPBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 100V 28A D2PAK
|
||
IRL540SPBF
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
MOSFET N-CH 100V 28A D2PAK
|
||
IRL540SPBF
|
LiteOn | 完全替代 | D2PAK-2 |
MOSFET N-CH 100V 28A D2PAK
|
||
IRL540STRL
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 100V 28A D2PAK
|
|||
IRL540STRL
|
VISHAY | 完全替代 | D2PAK |
MOSFET N-CH 100V 28A D2PAK
|
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