Technical parameters/dissipated power: | 3.7W (Ta), 150W (Tc) |
|
Technical parameters/Input capacitance (Ciss): | 2200pF @25V(Vds) |
|
Technical parameters/dissipated power (Max): | 3.7W (Ta), 150W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Length: | 10.67 mm |
|
Dimensions/Width: | 9.65 mm |
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Dimensions/Height: | 4.83 mm |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRL540NSPBF
|
International Rectifier | 功能相似 | TO-263-3 |
INTERNATIONAL RECTIFIER IRL540NSPBF 场效应管, N 通道, MOSFET, 100V, 36A, D2-PAK 新
|
||
IRL540NSPBF
|
Infineon | 功能相似 | TO-263-3 |
INTERNATIONAL RECTIFIER IRL540NSPBF 场效应管, N 通道, MOSFET, 100V, 36A, D2-PAK 新
|
||
|
|
IFC | 功能相似 |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.044Ω; ID 36A; D2Pak; PD 140W; VGS +/-16V
|
|||
IRL540NSTRRPBF
|
Infineon | 功能相似 | TO-263-3 |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.044Ω; ID 36A; D2Pak; PD 140W; VGS +/-16V
|
||
IRL540S
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 100V 28A D2PAK
|
||
IRL540SPBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 100V 28A D2PAK
|
||
IRL540SPBF
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
MOSFET N-CH 100V 28A D2PAK
|
||
IRL540SPBF
|
LiteOn | 完全替代 | D2PAK-2 |
MOSFET N-CH 100V 28A D2PAK
|
||
IRL540STRL
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 100V 28A D2PAK
|
|||
IRL540STRL
|
VISHAY | 完全替代 | D2PAK |
MOSFET N-CH 100V 28A D2PAK
|
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