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Model IRF830

Description 功率MOSFET Power MOSFET

Brand: Vishay Semiconductor

Packaging TO-220

Delivery time

Packaging method Tube

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(1573) Minimum order quantity(1)

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Technical parameters/rated voltage (DC):	500 V
Technical parameters/rated current:	4.50 A
Technical parameters/drain source resistance:	1.50 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	74.0 W
Technical parameters/Input capacitance:	610 pF
Technical parameters/gate charge:	38.0 nC
Technical parameters/drain source voltage (Vds):	500 V
Technical parameters/Leakage source breakdown voltage:	500V (min)
Technical parameters/breakdown voltage of gate source:	±20.0 V
Technical parameters/Continuous drain current (Ids):	4.50 A
Technical parameters/rise time:	16.0 ns
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220
Dimensions/Packaging:	TO-220
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	Non-Compliant
Compliant with standards/lead standards:	Contains Lead

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