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Model IRF830PBF
Description MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 1.5Ω; ID 4.5A; TO-220AB; PD 74W; VGS +/-20V
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Brand: Vishay Precision Group
Packaging TO-220
Delivery time
Packaging method
Standard packaging quantity 1
5.83  yuan 5.83yuan
10+:
$ 7.0008
100+:
$ 6.6508
500+:
$ 6.4174
1000+:
$ 6.4057
2000+:
$ 6.3591
5000+:
$ 6.3007
7500+:
$ 6.2540
10000+:
$ 6.2307
Quantity
10+
100+
500+
1000+
2000+
Price
$7.0008
$6.6508
$6.4174
$6.4057
$6.3591
Price $ 7.0008 $ 6.6508 $ 6.4174 $ 6.4057 $ 6.3591
Start batch production 10+ 100+ 500+ 1000+ 2000+
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3848) Minimum order quantity(10)
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Technical parameters/drain source resistance: 1.5 Ω

Technical parameters/dissipated power: 74 W

Technical parameters/input capacitance: 610pF @25V

Technical parameters/drain source voltage (Vds): 500 V

Technical parameters/leakage source breakdown voltage: 500 V

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220

External dimensions/length: 10.51 mm

External dimensions/packaging: TO-220

Physical parameters/operating temperature: -55℃ ~ 150℃

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIHP5N50D-GE3 SIHP5N50D-GE3 Vishay Siliconix 类似代替 TO-220-3
N 通道 MOSFET，D 系列高电压，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
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