Technical parameters/rated voltage (DC): | 500 V |
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Technical parameters/rated current: | 4.50 A |
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Technical parameters/rated power: | 74 W |
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Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 1.5 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 74 W |
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Technical parameters/threshold voltage: | 4 V |
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Technical parameters/Input capacitance: | 610 pF |
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Technical parameters/gate charge: | 38.0 nC |
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Technical parameters/drain source voltage (Vds): | 500 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 4.50 A |
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Technical parameters/rise time: | 16 ns |
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Technical parameters/Input capacitance (Ciss): | 610pF @25V(Vds) |
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Technical parameters/rated power (Max): | 74 W |
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Technical parameters/descent time: | 16 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 74000 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Other/Manufacturing Applications: | power management |
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Compliant with standards/RoHS standards: |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHP5N50D-GE3
|
Vishay Siliconix | 类似代替 | TO-220-3 |
N 通道 MOSFET，D 系列高电压，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
|
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