Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | TO-252 |
|
Dimensions/Packaging: | TO-252 |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDD3670
|
Fairchild | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD3670 晶体管, MOSFET, N沟道, 34 A, 100 V, 0.022 ohm, 10 V, 2.5 V
|
||
FDD3670
|
ON Semiconductor | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD3670 晶体管, MOSFET, N沟道, 34 A, 100 V, 0.022 ohm, 10 V, 2.5 V
|
||
FDD3682
|
Fairchild | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD3682 晶体管, MOSFET, N沟道, 32 A, 100 V, 0.032 ohm, 10 V, 4 V
|
||
FDD3860
|
Fairchild | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD3860 晶体管, MOSFET, N沟道, 29 A, 100 V, 0.029 ohm, 10 V, 3.8 V
|
||
FDD3860
|
ON Semiconductor | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD3860 晶体管, MOSFET, N沟道, 29 A, 100 V, 0.029 ohm, 10 V, 3.8 V
|
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