Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.029 Ω
Technical parameters/dissipated power: 3.75 W
Technical parameters/threshold voltage: 3.8 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 1310pF @50V(Vds)
Technical parameters/rated power (Max): 3.1 W
Technical parameters/descent time: 7 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 69 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDD3670
|
Fairchild | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD3670 晶体管, MOSFET, N沟道, 34 A, 100 V, 0.022 ohm, 10 V, 2.5 V
|
||
FDD3670
|
ON Semiconductor | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD3670 晶体管, MOSFET, N沟道, 34 A, 100 V, 0.022 ohm, 10 V, 2.5 V
|
||
|
|
Rochester | 类似代替 | TO-252 |
FAIRCHILD SEMICONDUCTOR FDD3672 晶体管, MOSFET, N沟道, 44 A, 100 V, 0.024 ohm, 10 V, 4 V
|
||
FDD3672
|
Fairchild | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD3672 晶体管, MOSFET, N沟道, 44 A, 100 V, 0.024 ohm, 10 V, 4 V
|
||
FDD3672
|
Freescale | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD3672 晶体管, MOSFET, N沟道, 44 A, 100 V, 0.024 ohm, 10 V, 4 V
|
||
FDD3682
|
Fairchild | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD3682 晶体管, MOSFET, N沟道, 32 A, 100 V, 0.032 ohm, 10 V, 4 V
|
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