FDD3860 In Stock|PDF|Datasheet|Price|Agent[FDD3860 Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

Warm reminder: The pictures are for reference only. The actual product may vary

pk Collection Purchase of mobile phones

Model FDD3860

Description FAIRCHILD SEMICONDUCTOR FDD3860 晶体管, MOSFET, N沟道, 29 A, 100 V, 0.029 ohm, 10 V, 3.8 V

Brand: Fairchild

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

Add to Cart Buy now

Welcome to use ICGOODFIND AI Assistant

Chip AI consultant

Download related files

Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.029 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	69 W
Technical parameters/threshold voltage:	3.8 V
Technical parameters/drain source voltage (Vds):	100 V
Technical parameters/Continuous drain current (Ids):	6.2A
Technical parameters/Input capacitance (Ciss):	1740pF @50V(Vds)
Technical parameters/rated power (Max):	3.1 W
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	3.1W (Ta), 69W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Length:	6.73 mm
Dimensions/Width:	6.22 mm
Dimensions/Height:	2.39 mm
Dimensions/Packaging:	TO-252-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
FDD3670	Fairchild	类似代替	TO-252-3	FAIRCHILD SEMICONDUCTOR FDD3670 晶体管, MOSFET, N沟道, 34 A, 100 V, 0.022 ohm, 10 V, 2.5 V	PDF
FDD3670	ON Semiconductor	类似代替	TO-252-3	FAIRCHILD SEMICONDUCTOR FDD3670 晶体管, MOSFET, N沟道, 34 A, 100 V, 0.022 ohm, 10 V, 2.5 V	PDF
FDD3672	Rochester	类似代替	TO-252	FAIRCHILD SEMICONDUCTOR FDD3672 晶体管, MOSFET, N沟道, 44 A, 100 V, 0.024 ohm, 10 V, 4 V	PDF
FDD3672	Fairchild	类似代替	TO-252-3	FAIRCHILD SEMICONDUCTOR FDD3672 晶体管, MOSFET, N沟道, 44 A, 100 V, 0.024 ohm, 10 V, 4 V	PDF
FDD3672	Freescale	类似代替	TO-252-3	FAIRCHILD SEMICONDUCTOR FDD3672 晶体管, MOSFET, N沟道, 44 A, 100 V, 0.024 ohm, 10 V, 4 V	PDF
FDD3682	Fairchild	类似代替	TO-252-3	FAIRCHILD SEMICONDUCTOR FDD3682 晶体管, MOSFET, N沟道, 32 A, 100 V, 0.032 ohm, 10 V, 4 V