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Model BSC094N03SG
Description OptiMOS®2功率三极管 OptiMOS™2 Power-Transistor
Product QR code
Brand: Infineon
Packaging PG-TDSON-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1200) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

30.0 V

 

Technical parameters/rated current:

35.0 A

 

Technical parameters/Input capacitance:

1.80 nF

 

Technical parameters/gate charge:

14.0 nC

 

Technical parameters/drain source voltage (Vds):

30.0 V

 

Technical parameters/Continuous drain current (Ids):

35.0 A

 

Technical parameters/dissipated power (Max):

2.8W (Ta), 52W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

PG-TDSON-8

 

Dimensions/Packaging:

PG-TDSON-8

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSC080N03LSGATMA1 BSC080N03LSGATMA1 Infineon 功能相似 PG-TDSON-8
INFINEON BSC080N03LSGATMA1 晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V
PDF
BSC0909NSATMA1 BSC0909NSATMA1 Infineon 功能相似 PG-TDSON-8
晶体管, MOSFET, N沟道, 44 A, 34 V, 0.0077 ohm, 10 V, 2 V
PDF

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