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Model BSC0909NSATMA1

Description 晶体管, MOSFET, N沟道, 44 A, 34 V, 0.0077 ohm, 10 V, 2 V

Brand: Infineon

Packaging PG-TDSON-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated power:	27 W
Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.0077 Ω
Technical parameters/polarity:	N-CH
Technical parameters/dissipated power:	2.5 W
Technical parameters/threshold voltage:	2 V
Technical parameters/drain source voltage (Vds):	34 V
Technical parameters/Continuous drain current (Ids):	12A
Technical parameters/rise time:	4.4 ns
Technical parameters/Input capacitance (Ciss):	1110pF @15V(Vds)
Technical parameters/descent time:	5.4 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	2.5W (Ta), 27W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	PG-TDSON-8
Dimensions/Length:	5.9 mm
Dimensions/Width:	5.15 mm
Dimensions/Height:	1.27 mm
Dimensions/Packaging:	PG-TDSON-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	VRD/VRM, Onboard charger, Mainboard
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	BSC057N03LSGATMA1	IFC	类似代替		Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC057N03LSGATMA1, 71 A, Vds=30 V, 8引脚 TDSON封装
	BSC080N03LSGATMA1	Infineon	类似代替	PG-TDSON-8	INFINEON BSC080N03LSGATMA1 晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V	PDF