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Model BSC080N03LSGATMA1
Description INFINEON BSC080N03LSGATMA1 晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V
Product QR code
Brand: Infineon
Packaging PG-TDSON-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
4.5  yuan 4.5yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4271) Minimum order quantity(1)
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Technical parameters/rated power:

35 W

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.0067 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

35 W

 

Technical parameters/threshold voltage:

2.2 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Leakage source breakdown voltage:

30 V

 

Technical parameters/Continuous drain current (Ids):

14A

 

Technical parameters/rise time:

2.8 ns

 

Technical parameters/Input capacitance (Ciss):

1300pF @15V(Vds)

 

Technical parameters/descent time:

2.6 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2.5W (Ta), 35W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

PG-TDSON-8

 

Dimensions/Length:

5.9 mm

 

Dimensions/Width:

5.15 mm

 

Dimensions/Height:

1.27 mm

 

Dimensions/Packaging:

PG-TDSON-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

VRD/VRM, Onboard charger, Mainboard

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSC057N03LSGATMA1 BSC057N03LSGATMA1 IFC 类似代替
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC057N03LSGATMA1, 71 A, Vds=30 V, 8引脚 TDSON封装
BSC0909NSATMA1 BSC0909NSATMA1 Infineon 类似代替 PG-TDSON-8
晶体管, MOSFET, N沟道, 44 A, 34 V, 0.0077 ohm, 10 V, 2 V
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