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Model BC817W,115

Description NXP BC817W,115 单晶体管双极, NPN, 45 V, 100 MHz, 200 mW, 500 mA, 100 hFE

Brand: NXP

Packaging SOT-323-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/frequency:	100 MHz
Technical parameters/number of pins:	3
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	200 mW
Technical parameters/breakdown voltage (collector emitter):	45 V
Technical parameters/Maximum allowable collector current:	0.5A
Technical parameters/minimum current amplification factor (hFE):	100 @100mA, 1V
Technical parameters/maximum current amplification factor (hFE):	100 @100mA, 1V
Technical parameters/rated power (Max):	200 mW
Technical parameters/DC current gain (hFE):	100
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	200 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-323-3
Dimensions/Height:	1 mm
Dimensions/Packaging:	SOT-323-3
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Power Management, Industrial
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

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