Technical parameters/breakdown voltage (collector emitter): | 80 V |
|
Technical parameters/minimum current amplification factor (hFE): | 30 @2.5A, 5V |
|
Technical parameters/rated power (Max): | 1 W |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-205 |
|
Dimensions/Packaging: | TO-205 |
|
Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Semelab | 类似代替 | BCY |
Trans GP BJT NPN 80V 5A 3Pin TO-39
|
||
2N5336
|
Microsemi | 类似代替 | TO-39 |
Trans GP BJT NPN 80V 5A 3Pin TO-39
|
||
2N5336
|
NJS | 类似代替 |
Trans GP BJT NPN 80V 5A 3Pin TO-39
|
|||
2N5336
|
Central Semiconductor | 类似代替 | TO-39-3 |
Trans GP BJT NPN 80V 5A 3Pin TO-39
|
||
2N5337
|
Microsemi | 类似代替 | TO-39-3 |
Trans GP BJT NPN 80V 5A 3Pin TO-39
|
||
2N5337
|
Central Semiconductor | 类似代替 | TO-205 |
Trans GP BJT NPN 80V 5A 3Pin TO-39
|
||
|
|
Microsemi | 完全替代 | TO-205 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
||
JANTX2N5152
|
Aeroflex | 完全替代 | Through Hole |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
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